{"id":386078,"date":"2024-10-20T03:33:45","date_gmt":"2024-10-20T03:33:45","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bsi-pd-cen-clc-tr-17603-10-122021\/"},"modified":"2024-10-26T06:29:36","modified_gmt":"2024-10-26T06:29:36","slug":"bsi-pd-cen-clc-tr-17603-10-122021","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bsi-pd-cen-clc-tr-17603-10-122021\/","title":{"rendered":"BSI PD CEN\/CLC\/TR 17603-10-12:2021"},"content":{"rendered":"
This handbook is a part of the System Engineering branch and covers the methods for the calculation of radiation received and its effects, and a policy for design margins. Both natural and man-made sources of radiation (e.g.<\/i> radioisotope thermoelectric generators, or RTGs) are considered in the handbook.<\/p>\n
This handbook can be applied to the evaluation of radiation effects on all space systems.<\/p>\n
This handbook can be applied to all product types which exist or operate in space, as well as to crews of on manned space missions.<\/p>\n
This handbook complements to EN 16603-10-12 \u201cMethods for the calculation of radiation received and its effects and a policy for the design margin\u201d.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 1 Scope <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 2 Terms, definitions and abbreviated terms 2.1 Terms from other documents 2.2 Terms specific to the present handbook 2.3 Abbreviated terms <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | 3 Compendium of radiation effects 3.1 Purpose <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 3.2 Effects on electronic and electrical systems 3.2.1 Total ionising dose 3.2.2 Displacement damage <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 3.2.3 Single event effects <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | 3.3 Effects on materials 3.4 Payload-specific radiation effects <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | 3.5 Biological effects 3.6 Spacecraft charging 3.7 References <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | 4 Margin 4.1 Introduction 4.1.1 Application of margins <\/td>\n<\/tr>\n | ||||||
22<\/td>\n | 4.2 Environment uncertainty <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | 4.3 Effects parameters\u2019 uncertainty 4.3.1 Overview 4.3.2 Shielding <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | 4.3.3 Ionising dose calculation 4.3.4 Non-ionising dose (NIEL, displacement damage) 4.3.5 Single event effects <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | 4.3.6 Effects on sensors 4.4 Testing-related uncertainties 4.4.1 Overview 4.4.2 Beam characteristics 4.4.3 Radioactive sources <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | 4.4.4 Packaging 4.4.5 Penetration 4.4.6 Representativeness 4.5 Procurement processes and device reproducibility <\/td>\n<\/tr>\n | ||||||
27<\/td>\n | 4.6 Project management decisions 4.7 Relationship with derating 4.8 Typical design margins 4.9 References <\/td>\n<\/tr>\n | ||||||
28<\/td>\n | 5 Radiation shielding 5.1 Introduction 5.2 Radiation transport processes 5.2.1 Overview 5.2.2 Electrons <\/td>\n<\/tr>\n | ||||||
30<\/td>\n | 5.2.3 Protons and other heavy particles <\/td>\n<\/tr>\n | ||||||
34<\/td>\n | 5.2.4 Electromagnetic radiation \u2013 bremsstrahlung <\/td>\n<\/tr>\n | ||||||
35<\/td>\n | 5.3 Ionising dose enhancement 5.4 Material selection 5.5 Equipment design practice 5.5.1 Overview <\/td>\n<\/tr>\n | ||||||
36<\/td>\n | 5.5.2 The importance of layout 5.5.3 Add-on shielding 5.5.3.1 Introduction <\/td>\n<\/tr>\n | ||||||
37<\/td>\n | 5.5.3.2 On-PCB shielding <\/td>\n<\/tr>\n | ||||||
38<\/td>\n | 5.5.3.3 Whole box shielding 5.6 Shielding calculation methods and tools \u2013 Decision on using deterministic radiation calculations, detailed Monte Carlo simulations, or sector shielding analysis <\/td>\n<\/tr>\n | ||||||
47<\/td>\n | 5.7 Example detailed radiation transport and shielding codes 5.8 Uncertainties <\/td>\n<\/tr>\n | ||||||
48<\/td>\n | 5.9 References <\/td>\n<\/tr>\n | ||||||
50<\/td>\n | 6 Total ionising dose 6.1 Introduction 6.2 Definition 6.3 Technologies sensitive to total ionising dose <\/td>\n<\/tr>\n | ||||||
52<\/td>\n | 6.4 Total ionising dose calculation 6.5 Uncertainties <\/td>\n<\/tr>\n | ||||||
53<\/td>\n | 7 Displacement damage 7.1 Introduction 7.2 Definition 7.3 Physical processes and modelling <\/td>\n<\/tr>\n | ||||||
57<\/td>\n | 7.4 Technologies susceptible to displacement damage 7.4.1 Overview <\/td>\n<\/tr>\n | ||||||
58<\/td>\n | 7.4.2 Bipolar <\/td>\n<\/tr>\n | ||||||
59<\/td>\n | 7.4.3 Charge-coupled devices (CCD) 7.4.4 Active pixel sensors (APS) <\/td>\n<\/tr>\n | ||||||
60<\/td>\n | 7.4.5 Photodiodes 7.4.6 Laser diodes 7.4.7 Light emitting diode (LED) 7.4.8 Optocouplers <\/td>\n<\/tr>\n | ||||||
61<\/td>\n | 7.4.9 Solar cells 7.4.10 Germanium detectors <\/td>\n<\/tr>\n | ||||||
62<\/td>\n | 7.4.11 Glasses and optical components 7.5 Radiation damage assessment 7.5.1 Equivalent fluence calculation 7.5.2 Calculation approach 7.5.3 3-D Monte Carlo analysis 7.5.4 Displacement damage testing <\/td>\n<\/tr>\n | ||||||
63<\/td>\n | 7.6 NIEL rates for different particles and materials <\/td>\n<\/tr>\n | ||||||
70<\/td>\n | 7.7 Uncertainties 7.8 References <\/td>\n<\/tr>\n | ||||||
72<\/td>\n | 8 Single event effects 8.1 Introduction <\/td>\n<\/tr>\n | ||||||
73<\/td>\n | 8.2 Modelling 8.2.1 Overview 8.2.2 Notion of LET (for heavy ions) 8.2.3 Concept of cross section <\/td>\n<\/tr>\n | ||||||
74<\/td>\n | 8.2.4 Concept of sensitive volume, critical charge and effective LET <\/td>\n<\/tr>\n | ||||||
75<\/td>\n | 8.3 Technologies susceptible to single event effects 8.4 Test methods 8.4.1 Overview 8.4.2 Heavy ion beam testing <\/td>\n<\/tr>\n | ||||||
76<\/td>\n | 8.4.3 Proton and neutron beam testing 8.4.4 Experimental measurement of SEE sensitivity <\/td>\n<\/tr>\n | ||||||
77<\/td>\n | 8.4.5 Influence of testing conditions 8.4.5.1 Overview 8.4.5.2 Energy and track structure dependence <\/td>\n<\/tr>\n | ||||||
78<\/td>\n | 8.4.5.3 Angle effect on device response 8.4.5.4 Pattern influence <\/td>\n<\/tr>\n | ||||||
79<\/td>\n | 8.5 Hardness assurance 8.5.1 Rate prediction 8.5.2 Prediction of SEE rates for ions <\/td>\n<\/tr>\n | ||||||
81<\/td>\n | 8.5.3 Improvements <\/td>\n<\/tr>\n | ||||||
82<\/td>\n | 8.5.4 Method synthesis 8.5.5 Prediction of SEE rates of protons and neutrons <\/td>\n<\/tr>\n | ||||||
84<\/td>\n | 8.5.6 Method synthesis 8.5.7 Calculation toolkit 8.5.8 Applicable derating and mitigating techniques 8.5.9 Analysis at system level <\/td>\n<\/tr>\n | ||||||
85<\/td>\n | 8.6 Destructive SEE 8.6.1 Single event latch-up (SEL) and single event snapback (SESB) 8.6.1.1 Definition 8.6.1.2 Sensitive devices 8.6.1.3 Modelling <\/td>\n<\/tr>\n | ||||||
86<\/td>\n | 8.6.1.4 Test method 8.6.1.5 Hardness Assurance 8.6.1.6 Prediction issues in case of SEL <\/td>\n<\/tr>\n | ||||||
87<\/td>\n | 8.6.2 Single event gate rupture (SEGR) and single event dielectric rupture (SEDR) 8.6.2.1 Definition 8.6.2.2 Sensitive devices 8.6.2.3 Modelling 8.6.2.4 Test method <\/td>\n<\/tr>\n | ||||||
88<\/td>\n | 8.6.2.5 Hardness Assurance 8.6.3 Single event burnout (SEB) 8.6.3.1 Definition 8.6.3.2 Sensitive devices 8.6.3.3 Modelling 8.6.3.4 Test method 8.6.3.5 Hardness Assurance <\/td>\n<\/tr>\n | ||||||
89<\/td>\n | 8.7 Non-destructive SEE 8.7.1 Single event upset (SEU) 8.7.1.1 Definition 8.7.1.2 Sensitive devices 8.7.1.3 Modelling 8.7.1.4 Test method 8.7.1.5 Hardness assurance 8.7.2 Multiple-cell upset (MCU) and single word multiple-bit upset (SMU) 8.7.2.1 Definitions <\/td>\n<\/tr>\n | ||||||
90<\/td>\n | 8.7.2.2 Devices susceptible to MCU 8.7.2.3 Modelling 8.7.2.4 Test <\/td>\n<\/tr>\n | ||||||
91<\/td>\n | 8.7.2.5 Hardness assurance 8.7.3 Single event functional interrupt (SEFI) 8.7.3.1 Definition 8.7.3.2 Susceptible components 8.7.3.3 Modelling 8.7.3.4 Test method 8.7.3.5 Hardness assurance <\/td>\n<\/tr>\n | ||||||
92<\/td>\n | 8.7.4 Single event hard error (SEHE) 8.7.4.1 Definition 8.7.4.2 Devices susceptible to SEHE 8.7.4.3 Modelling 8.7.4.4 Test method <\/td>\n<\/tr>\n | ||||||
93<\/td>\n | 8.7.4.5 Hardness assurance 8.7.5 Single event transient (SET) and single event disturb (SED) 8.7.5.1 Definition 8.7.5.2 Sensitive devices <\/td>\n<\/tr>\n | ||||||
94<\/td>\n | 8.7.5.3 Modelling 8.7.5.4 Test method 8.7.5.5 Hardness assurance 8.8 References <\/td>\n<\/tr>\n | ||||||
98<\/td>\n | 9 Radiation-induced sensor backgrounds 9.1 Introduction 9.2 Background in ultraviolet, optical and infrared imaging sensors <\/td>\n<\/tr>\n | ||||||
102<\/td>\n | 9.3 Background in charged particle detectors 9.4 Background in X-ray CCDs <\/td>\n<\/tr>\n | ||||||
103<\/td>\n | 9.5 Radiation background in gamma-ray instruments <\/td>\n<\/tr>\n | ||||||
106<\/td>\n | 9.6 Photomultipliers tubes and microchannel plates <\/td>\n<\/tr>\n | ||||||
107<\/td>\n | 9.7 Radiation-induced noise in gravity-wave detectors 9.8 Other problems common to detectors <\/td>\n<\/tr>\n | ||||||
108<\/td>\n | 9.9 References <\/td>\n<\/tr>\n | ||||||
110<\/td>\n | 10 Effects in biological material 10.1 Introduction 10.2 Quantities used in radiation protection work 10.2.1 Overview <\/td>\n<\/tr>\n | ||||||
111<\/td>\n | 10.2.2 Protection quantities <\/td>\n<\/tr>\n | ||||||
113<\/td>\n | 10.2.3 Operational quantities <\/td>\n<\/tr>\n | ||||||
115<\/td>\n | 10.3 Radiation effects in biological systems 10.3.1 Overview <\/td>\n<\/tr>\n | ||||||
116<\/td>\n | 10.3.2 Source of data 10.3.3 Early effects <\/td>\n<\/tr>\n | ||||||
117<\/td>\n | 10.3.4 Late effects 10.3.4.1 Overview 10.3.4.2 Stochastic late effects <\/td>\n<\/tr>\n | ||||||
118<\/td>\n | 10.3.4.3 Deterministic late effects <\/td>\n<\/tr>\n | ||||||
119<\/td>\n | 10.4 Radiation protection limits in space 10.4.1 Overview 10.4.2 International agreements <\/td>\n<\/tr>\n | ||||||
120<\/td>\n | 10.4.3 Other considerations in calculating crew exposure 10.4.4 Radiation limits used by the space agencies of the partners of the International Space Station (ISS) 10.4.4.1 Proposed CSA Limits <\/td>\n<\/tr>\n | ||||||
121<\/td>\n | 10.4.4.2 Proposed ESA Limits 10.4.4.3 Proposed NASA limits <\/td>\n<\/tr>\n | ||||||
122<\/td>\n | 10.4.4.4 Proposed JAXA Limits <\/td>\n<\/tr>\n | ||||||
123<\/td>\n | 10.4.4.5 Proposed RSA Limits <\/td>\n<\/tr>\n | ||||||
124<\/td>\n | 10.5 Uncertainties 10.5.1 Overview 10.5.2 Spacecraft shielding interactions 10.5.3 The unique effects of heavy ions <\/td>\n<\/tr>\n | ||||||
125<\/td>\n | 10.5.4 Extrapolation from high-dose effects to low-dose effects 10.5.5 Variability in composition, space and time 10.5.6 Effects of depth-dose distribution 10.5.7 Influence of spaceflight environment <\/td>\n<\/tr>\n | ||||||
127<\/td>\n | 10.5.8 Uncertainties summary 10.6 References <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Space engineering. Calculation of radiation and its effects and margin policy handbook<\/b><\/p>\n |