There are two types of thermally stimulated current (TSC) measurement methods, classified by the origin of the current. One is generated by the detrapping of charges. The other one is generated by depolarization. This part of IEC 62607 focuses on the former method, and specifies the measurement method to be developed for determining defect states of nanoenabled metal-oxide interfacial devices.<\/p>\n
This document includes:<\/p>\n
outlines of the experimental procedures used to measure TSC,<\/p>\n<\/li>\n
methods of interpretation of results and discussion of data analysis, and<\/p>\n<\/li>\n
case studies.<\/p>\n<\/li>\n<\/ul>\n
| PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
|---|---|---|---|---|---|---|---|
| 2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
| 4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
| 6<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
| 8<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
| 9<\/td>\n | 1 Scope 2 Normative references 3 Terms, definitions, and abbreviated terms 3.1 Terms and definitions <\/td>\n<\/tr>\n | ||||||
| 10<\/td>\n | 3.2 Abbreviated terms 4 Measurement of TSC 4.1 General 4.2 Sample preparation 4.3 Experimental procedures Figures Figure 1 \u2013 Structure of TSC measurement device <\/td>\n<\/tr>\n | ||||||
| 11<\/td>\n | 5 Reporting data 6 Data analysis \/ interpretation of results 6.1 General Figure 2 \u2013 Visualization of TSC measurement sequence Tables Table 1 \u2013 TSC measurement sequence steps and parameters <\/td>\n<\/tr>\n | ||||||
| 12<\/td>\n | 6.2 Peak method [1] 6.3 Tstart\u2013Tstop method [2] [3] 6.4 Initial rise method [4] <\/td>\n<\/tr>\n | ||||||
| 13<\/td>\n | Annex A (informative)Case study A.1 TSC measurement of Au\/GaAs (reference sample) A.1.1 General Figure A.1 \u2013 Photos of (a) the Au electrode configurationon GaAs reference sample, and (b) sample setting <\/td>\n<\/tr>\n | ||||||
| 14<\/td>\n | Figure A.2 \u2013 Structure of TSC measurement device <\/td>\n<\/tr>\n | ||||||
| 15<\/td>\n | Figure A.3 \u2013 TSC data comparison by samples Table A.1 \u2013 TSC measurement sequence steps and parameters \/ case study <\/td>\n<\/tr>\n | ||||||
| 16<\/td>\n | A.1.2 Estimating activation energy of defect states by peak method Figure A.4 \u2013 TSC data comparison by heating rate <\/td>\n<\/tr>\n | ||||||
| 18<\/td>\n | Figure A.5 \u2013 Determination of TSC peak positions using the second derivative curves <\/td>\n<\/tr>\n | ||||||
| 19<\/td>\n | Figure A.6 \u2013 Arrhenius plots of (a) ln(Tm2\/\u03b2) vs. 1\/Tm and (b) ln(Tm4\/\u03b2) vs. 1\/Tm Table A.2 \u2013 Activation energies of T1 to T6 for y = ln (Tm2\/\u03b2) Table A.3 \u2013 Activation energies of T1 to T6 for y = ln (Tm4\/\u03b2) <\/td>\n<\/tr>\n | ||||||
| 20<\/td>\n | A.2 TSC measurement of Ir\/Ta2O5 A.2.1 General Table A.4 \u2013 TSC measurement sequence steps and parameters \/ case study (2) <\/td>\n<\/tr>\n | ||||||
| 21<\/td>\n | Figure A.7 \u2013 TSC data comparison by samples Table A.5 \u2013 Conditions of Ta2O5 sputtering deposition <\/td>\n<\/tr>\n | ||||||
| 22<\/td>\n | Figure A.8 \u2013 TSC data comparison of Sample A by heating rate Figure A.9 \u2013 TSC data comparison of Sample B by heating rate <\/td>\n<\/tr>\n | ||||||
| 23<\/td>\n | Figure A.10 \u2013 TSC data comparison of Sample C by heating rate <\/td>\n<\/tr>\n | ||||||
| 24<\/td>\n | Figure A.11 \u2013 TSC data comparison by carrier injection method (Samples A, B and C) <\/td>\n<\/tr>\n | ||||||
| 25<\/td>\n | A.2.2 Estimating activation energy of defect states by Peak method Figure A.12 \u2013 Samples A, B and C: Determination of TSC peak positionsusing the second derivative curves <\/td>\n<\/tr>\n | ||||||
| 26<\/td>\n | Figure A.13 \u2013 Arrhenius plots for TA1, Sample A Table A.6 \u2013 Activation energies of Samples A, B and C <\/td>\n<\/tr>\n | ||||||
| 28<\/td>\n | Annex B (informative)Possible methods to analyse TSC spectra B.1 Peak method B.2 Tstart\u2013Tstop method Figure B.1 \u2013 Peak method <\/td>\n<\/tr>\n | ||||||
| 29<\/td>\n | B.3 Initial rise method Figure B.2 \u2013 Tstart\u2013Tstop method <\/td>\n<\/tr>\n | ||||||
| 30<\/td>\n | Figure B.3 \u2013 Determination of trap level energy through initial rise method <\/td>\n<\/tr>\n | ||||||
| 31<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Nanomanufacturing. Key control characteristics – Nano-enabled metal-oxide interfacial devices. Test method for defect states by thermally stimulated current<\/b><\/p>\n |